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    LF356M/NOPB  -  JFET Input Operational Amplifiers  -  National Semiconductor Corporation  -  通用


    General Description
    These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology).
    These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.


    Features
    Advantages

    n Replace expensive hybrid and module FET op amps
    n Rugged JFETs allow blow-out free handling compared with MOSFET input devices
    n Excellent for low noise applications using either high or low source impedance—very low 1/f corner
    n Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
    n New output stage allows use of large capacitive loads (5,000 pF) without stability problems
    n Internal compensation and large differential input voltage capability


    Applications
    n Precision high speed integrators
    n Fast D/A and A/D converters
    n High impedance buffers
    n Wideband, low noise, low drift amplifiers
    n Logarithmic amplifiers
    n Photocell amplifiers
    n Sample and Hold circuits


    Common Features
    n Low input bias current: 30pA
    n Low Input Offset Current: 3pA
    n High input impedance: 1012W
    n Low input noise current:
    n High common-mode rejection ratio: 100 dB
    n Large dc voltage gain: 106 dB



    点击查看 : LF356M/NOPB.pdf   



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