BAS  -  系列元器件数据手册
BAS116  -  Low-leakage diode  -  NXP Semiconductors(PHILIPS)  -  开关二极管

FEATURES
•Plastic SMD package
•Low leakage current: typ. 3 pA
•Switching time: typ. 0.8 μs
•Continuous reverse voltage: max. 75 V
•Repetitive peak reverse voltage: max. 85 V
•Repetitive peak forward current: max. 500 mA.

APPLICATION
•Low leakage current applications in surface mounted circuits.

DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.