2N-3  -  系列元器件数据手册
2N3055HG  -  Complementary Silicon Power Transistors  -  ON Semiconductor  -  通用晶体管

Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.

Features
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc
• Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
• Excellent Safe Operating Area
• Pb−Free Packages are Available*

15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS